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Description: TRANS 8NPN DARL 50V 0.5A 18DIP
Detailed description: Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP
Transistor Type: 8 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - collector-emitter breakdown (maximum): 50V
Vce saturation value (maximum value) at different Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Maximum): -
DC current gain (hFE) at different Ic, Vce (minimum value): 1000 @ 350mA, 2V
Power - Max: 2.25W
Working temperature: -20°C ~ 150°C (TJ)
Mounting type: Through hole
Package/Enclosure: 18-DIP (0.300", 7.62mm)
Other names: 497-2354-5
Compliance with lead-free requirements/ Compliance with Restriction of Hazardous Substances (RoHS) regulations: Lead-free/ Compliance with Restriction of Hazardous Substances (RoHS) regulations
Moisture Sensitivity Level (MSL): 1 (Unlimited)
