The TOSHIBA TLP759 Consists of a GaA-As high-output light emitting diode and a high speed detector of one chip photo diode-transistorThis unit is 8-lead Dip Isolation voltage:5000 Vrms(min) Switching speed:tpHL =0.2µs (typ) tpLH=0.3µs(typ)(RL=1.9 KΩ TTL Compatible UL recognized:ULI577-File No:E67349 BSI approved:BS EN60065:2002-Certificate no:8869 BS EN60950-1:2002-certificate no:8870 Option (D4)typeVDE Approved:DIN EN60747-5-2 Certificate No:40009302 maximum operating insulation Voltage:890vPKHighest permissible over Voltage:6000vPK creepage distance:7.0mm(min) Clearange:7.0mm(min) Insulation thickness:0.4mm(mini)
