The SST29EE/VE010 are 128K x8 CMOS Page-WriteEEPROMs manufactured with SST’s proprietary, high-performanceCMOS SuperFlash technology. The split-gatecell design and thick-oxide tunneling injector attain betterreliability and manufacturability compared with alternateapproaches. The SST29EE/VE010 write with a singlepower supply. Internal Erase/Program is transparent to theuser. The SST29EE/VE010 conform to JEDEC standardpinouts for byte-wide memories.Featuring high performance Page-Write, the SST29EE/VE010 provide a typical Byte-Write time of 39 µsec. Theentire memory, i.e., 128 Kbyte, can be written page-bypagein as little as 5 seconds, when using interface featuressuch as Toggle Bit or Data# Polling to indicate the completionof a Write cycle. To protect against inadvertent write,the SST29EE/VE010 have on-chip hardware and SoftwareData Protection schemes. Designed, manufactured, andtested for a wide spectrum of applications, the SST29EE/VE010 are offered with a guaranteed Page-Write enduranceof 10,000 cycles. Data retention is rated at greaterthan 100 years. The SST29EE/VE010 are suited for applications thatrequire convenient and economical updating of program,configuration, or data memory. For all systemapplications, the SST29EE/VE010 significantlyimprove performance and reliability, while loweringpower consumption. The SST29EE/VE010 improveflexibility while lowering the cost for program, data, andconfiguration storage applications.To meet high density, surface mount requirements, theSST29EE/VE010 are offered in 32-lead PLCC and 32-leadTSOP packages. A 600-mil, 32-pin PDIP package is alsoavailable. See Figures 1, 2, and 3 for pin assignments.
