model: | N2500N-T1B-AT |
Risk level: | 5.58 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage: | 250 V |
Maximum drain current (ID): | 0.5 A |
Maximum drain-source on-resistance: | 6.6 ? |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Number of components: | 1 |
Number of terminals: | 3 |
Operating mode: | ENHANCEMENT MODE |
Surface mount: | YES |
Terminal form: | GULL WING |
Terminal location: | DUAL |
Transistor Applications: | SWITCHING |
Transistor component materials: | SILICON |
