<!DOCTYPE html> <html> <head> </head> <body> Fifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined withthe fast switching speed and ruggedized device design thatHEXFET® Power MOSFETs are well known for, providesthe designer with an extremely efficient and reliable devicefor use in a wide variety of applications.The D-Pak is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRFU series) is for through-hole mountingapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount applications. </body> </html>
