IRFD110PBF product parameters Description: MOSFET N-CH 100V 1A 4-DIP Detailed Description: Through-Hole N-Channel 100V 1A(Ta) 1.3W(Ta) 4-DIP, Hexdip, HVMDIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain-source voltage (Vdss): 100V Current - Continuous Drain (Id) at 25°C: 1A (Ta) Driving Voltage (Max Rds On, Min Rds On): 10V Rds On (maximum) at Vgs vs. Id: 540 milliohms @ 600mA, 10V Vgs(th) (maximum) at different Id: 4V @ 250µA Gate Charge (Qg) (Max) at Vgs: 8.3nC @ 10V Vgs (max): ±20V Input Capacitance (Ciss) (Max) at Vds: 180pF @ 25V FET Functions:- Power Dissipation (Max): 1.3W (Ta) Operating temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Vendor Device Packages: 4-DIP, Hexdip, HVMDIP Package/Housing: 4-DIP (0.300", 7.62mm) Other names: *IRFD110 IRFD111 IRFD112
