Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety ofpower applications. With these improvements, multipledevices can be used in an application with dramaticallyreduced board space. The package is designed forvapor phase, infra red, or wave soldering techniques.Power dissipation of greater than 0.8W is possible ina typical PCB mount application.
