The IR2106(4)(S) are high voltage,high speed power MOSFET andIGBT drivers with independent highand low side referenced output channels.Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction.The logic input is compatible withstandard CMOS or LSTTL output,down to 3.3V logic. The output driversfeature a high pulse current buffer stage designed for minimum driver cross-conduction. The floatingchannel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 600 volts.
