IPW60R160P6FKSA1 product data Brand: Infineon Technologies Description: MOSFET N-CH 600V TO247-3 Detailed description: Through-hole N-channel 600V 23.8A (Tc) 176W (Tc) PG-TO247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain-source voltage (Vdss): 600V Current - Continuous Drain (Id) at 25°C: 23.8A (Tc) Driving Voltage (Max Rds On, Min Rds On): 10V Rds On (maximum) at Vgs vs. Id: 160 milliohms @ 9A, 10V Vgs(th) (Max) at different Id: 4.5V @ 750µA Gate Charge (Qg) (Max) at Vgs: 44nC @ 10V Vgs (max): ±20V Input Capacitance (Ciss) (Max) at Vds: 2080pF @ 100V Power Dissipation (Max): 176W (Tc) Working temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package/Case: TO-247-3
