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Description: MOSFET P-CH 30V 5.3A 8-SOIC
Detailed description: Surface mount P-channel 30V 5.3A (Ta) 2.5W (Ta) 8-SO
FET type: P-channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss): 30V
Current - Continuous Drain (Id) at 25°C: 5.3A (Ta)
Drive voltage (maximum Rds On, minimum Rds On): 4.5V, 10V
Rds On (max) at different Id, Vgs: 50 milliohms @ 5.3A, 10V
Vgs(th) (maximum value) at different Id: 3V @ 250µA
Gate charge (Qg) at different Vgs (max): 14nC @ 10V
Vgs (maximum): ±25V
Input capacitance (Ciss) at different Vds (max): 528pF @ 15V
FET functions:-
Power dissipation (max): 2.5W (Ta)
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: surface mount
Supplier Device Package: 8-SO
Package/Casing: 8-SOIC (0.154", 3.90mm wide)
Other names: FDS9435ATR
