FA5510P DIP8

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Description: MOSFET N-CH 500V 57A SOT-227

Detailed description: Base Mount N Channel 500V 57A (Tc) 625W (Tc) SOT-227

FET type: N-channel

Technology: MOSFET (Metal Oxide)

Drain-source voltage (Vdss): 500V

Current - Continuous Drain (Id) at 25°C: 57A (Tc)

Driving voltage (maximum Rds On, minimum Rds On): 10V

Rds On (max) at different Id, Vgs: 80 milliohms @ 34A, 10V

Vgs(th) (maximum value) at different Id: 4V @ 250µA

Gate charge (Qg) at different Vgs (max): 338nC @ 10V

Vgs (maximum value): ±20V

Input capacitance (Ciss) at different Vds (maximum value): 10000pF @ 25V

Power dissipation (max): 625W (Tc)

Working temperature: -55°C ~ 150°C (TJ)

Installation type: base installation

Supplier device package: SOT-227

Package/casing: SOT-227-4, miniBLOC

Other names: *FA57SA50LC VS-FA57SA50LC VS-FA57SA50LC-ND VSFA57SA50LC VSFA57SA50LC-ND

Compliance with lead-free requirements/ Compliance with RoHS regulations: Contains lead/ Does not comply with RoHS regulations

Moisture Sensitivity Level (MSL): 1 (Unlimited)

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