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model: | BSN254A |
Risk level: | 5.8 |
Configuration: | Single |
Maximum drain current (Abs) (ID): | 0.3 A |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 1 W |
Subcategory: | FET General Purpose Power |
Surface mount: | NO |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
