<!DOCTYPE html> <html> <head> </head> <body> These N-Channel enhancement mode field effecttransistors are produced using Fairchild's proprietary, highcell density, DMOS technology. These products have beendesigned to minimize on-state resistance while providerugged, reliable, and fast switching performance. They canbe used in most applications requiring up to 500mA DC.These products are particularly suited for low voltage, lowcurrent applications such as small servo motor control,power MOSFET gate drivers, and other switchingapplications. </body> </html>
model: | BS170 |
Risk level: | 5.66 |
Is Samacsys? | N |
Configuration: | Single |
Maximum drain current (Abs) (ID): | 0.5 A |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Operating mode: | ENHANCEMENT MODE |
Maximum operating temperature: | 150 °C |
Polarity/Channel Type: | N-CHANNEL |
Maximum power dissipation (Abs): | 0.83 W |
Subcategory: | FET General Purpose Power |
Surface mount: | NO |
Terminal surface layer: | Tin/Lead (Sn/Pb) |
