7MB150N-120-IGBT POWER MODULES 7MBI50N-120

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7MBI50N-120 absolute maximum ratings: Collector-Emitter Voltage, VCES: 1200V; Gate -Emitter Voltage, VGES: ± 20V; Operating Junction Temperature, Tj: +150℃; Storage Temperature, TStg: -40 ~ +125℃

Category: IGBT

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