Type Designator: MMF70R900PTH Marking Code: 70R900P Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 22 W Maximum Drain-Source Voltage |Vds|: 700 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 5 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 15 nC Rise Time (tr): 25 nS Drain-Source Capacitance (Cd): 330 pF Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm Package: TO-220F
