2SK2266(TE24R,Q) product DATA?Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 45A TO220SM Detailed description: Surface mount N-channel 60V 45A (Ta) 65W (Tc) TO-220SM Manufacturer: Toshiba Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain-source voltage (Vdss): 60V Current - Continuous Drain (Id) at 25°C: 45A (Ta) Driving Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (maximum) at Vgs vs. Id: 30 milliohms @ 25A, 10V Vgs(th)(max) at different Id: 2V @ 1mA Gate charge (Qg) (maximum) at various Vgs: 60nC @ 10V Vgs (max): ±20V Input Capacitance (Ciss) (Max) at Vds: 1800pF @ 10V Power Dissipation (Max): 65W (Tc) Working temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM
