2SJ378

Risk level: 

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Configuration: 

Minimum drain-source breakdown voltage: 

Maximum drain current (Abs) (ID): 

Maximum drain current (ID): 

Maximum drain-source on-resistance: 

FET technology: 

Number of components: 

Number of terminals: 

Operating mode: 

Maximum operating temperature: 

Package body material: 

Maximum power consumption environment: 

Maximum power dissipation (Abs): 

Maximum pulsed drain current (IDM): 

Subcategory: 

Surface mount: 

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Transistor Applications: