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model: | 2SJ312 |
Risk level: | 5.59 |
Other features: | LOGIC LEVEL COMPATIBLE |
Shell connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage: | 60 V |
Maximum drain current (ID): | 14 A |
Maximum drain-source on-resistance: | 0.19 ? |
FET technology: | METAL-OXIDE SEMICONDUCTOR |
Number of components: | 1 |
Number of terminals: | 3 |
Operating mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (Celsius): | 240 |
Polarity/Channel Type: | P-CHANNEL |
Maximum power consumption environment: | 40 W |
Surface mount: | NO |
Terminal surface layer: | TIN LEAD |
Terminal form: | THROUGH-HOLE |
Terminal location: | SINGLE |
Transistor Applications: | SWITCHING |
Transistor component materials: | SILICON |
