model: 2N6520 Risk level: 5.06 Maximum collector current (IC): 0.5 A Collector-based maximum capacity: 6 pF Collector-emitter maximum voltage: 350 V Configuration: SINGLE Minimum DC current gain (hFE): 15 Number of components: 1 Number of terminals: 3 Maximum operating temperature: 150 °C Maximum power consumption environment: 1.5 W Maximum power dissipation (Abs): 0.625 W Certification status: Not Qualified Subcategory: Other Transistors Surface mount: NO Terminal surface layer: Tin/Lead (Sn/Pb) Terminal form: THROUGH-HOLE Terminal location: BOTTOM Transistor Applications: AMPLIFIER Transistor component materials: SILICON Nominal transition frequency (fT): 40 MHz Maximum off time (toff): 3500 ns Maximum opening time (tons): 200 ns VCEsat-Max? 1 V
